Three terminal ultra-fast spin orbit torque magnetic memory

See-Hun Yang, Timothy Phung, and Stuart Parkin
IBM Research - Almaden, California, United States

Keywords: non-volatile magnetic memory, spintronic devices, spin-orbit torques, ultra-fast and low power consumption memory, radiation hard

IBM proposes to develop a non-volatile ultra-fast memory technology, based on the manipulation of the magnetic order parameter in thin film nano-scopic magnetic structures using spin orbit torque. This technology can be manufactured using standard semiconductor manufacturing tools in the back end of the line processing flow of standard CMOS circuits, and will operate at speeds faster than SRAM (< 200 ps) and can function as both an ultra-dense SRAM and a high performance SRAM replacement. Moreover, the radiation hardened device is ultra-dense (3/8 the size of an ultra-dense six transistor SRAM), consumes 9.6 fJ per write operation (read operation consumes < 2.25 fJ) and requires no standby power. This can have a significant impact on computing systems, and in particular in extreme terrestrial environments or in the space environment. In the initial phase, we will experimentally demonstrate this memory in a small array with the density, speed, operating window, and reliability metrics at relatively low cost (full chip-level functionality will be realized in later phases and larger programs). IBM proposes two approaches, the first of which is based on the controlled motion of a single domain wall in a nano-wire, that we term a one domain wall race-track memory.